Micron Technology EBJ11UE6BASA-AG-E overview
Micron Technology Inc EBJ11UE6BASA-AG-E Dram, Memory Density:8.5899 Gbit, Memory Width:64, Organization:128MX64, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies...
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Manufactured byMicron Technology
Product groupModules
DescriptionMicron Technology Inc EBJ11UE6BASA-AG-E Dram, Memory Density:8.5899 Gbit, Memory Width:64, Organization:128MX64, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:300 ps, Clock Frequency-Max (fCLK):533 MHz, Refresh Cycles:8192
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