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MT47H64M16HW-3:E

Micron ยท DRAM's

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Micron MT47H64M16HW-3:E

Micron MT47H64M16HW-3:E overview

Micron Technology Inc MT47H64M16HW-3:E Dram, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1...

Manufactured byMicron
Part number or familyMT47H64M16HW-3:E
Product groupDRAM's

Product details

Manufactured byMicron
Product groupDRAM's
DescriptionMicron Technology Inc MT47H64M16HW-3:E Dram, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192, Access Mode:MULTI BANK PAGE BURST
Descriptionmicron MT47H64M16HW-3:E Integrated Circuit, micron FBGA

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Product group DRAM's Explore DRAM's Explore Integrated Circuits (ICs) Explore Memory
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