TP2522N8-G overview
Microchip Technology Inc TP2522N8-G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:220 V, Number of Elements:1, Drain Current-Max (ID):260 mA, Drain-source On Resistance-Max:12 Ω
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DescriptionMicrochip Technology Inc TP2522N8-G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:220 V, Number of Elements:1, Drain Current-Max (ID):260 mA, Drain-source On Resistance-Max:12 Ω
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