MICRO ELECTRONICS BD637 overview
Micro Electronics Corporation BD637 Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:NPN, Sur...
Product details
Manufactured byMICRO ELECTRONICS
Product groupModules
DescriptionMicro Electronics Corporation BD637 Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):25, Transition Frequency-Nom (fT):3 mΩz
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
MICRO ELECTRONICS
View MICRO ELECTRONICS profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request