MICRO ELECTRONICS BD636 overview
Micro Electronics Corporation BD636 Power Bipolar Transistor, Collector-Emitter Voltage-Max:60 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:PNP, Sur...
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Manufactured byMICRO ELECTRONICS
Product groupModules
DescriptionMicro Electronics Corporation BD636 Power Bipolar Transistor, Collector-Emitter Voltage-Max:60 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):25, Transition Frequency-Nom (fT):3 mΩz
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