Product details
Manufactured byMINDSPEED
Product groupModules
DescriptionMACOM UF2810P Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:COMMON SOURCE, 2 ELEMENTS,Number of Terminals:4,DS Breakdown Voltage-Min:65 V,Highest Frequency Band:ULTRA HIGH FREQUENCY BAND,Number of Elements:2,Drain Current-Max (Abs) (ID):1.4 A,Drain Current-Max (ID):1.4 A
DescriptionMACOM UF2810P Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (Abs) (ID):1.4 A, Drain Current-Max (ID):1.4 A
DescriptionMindspeed, MACOM UF2810P Communications, RF Power Products, Broadcast and Industrial, Scientific and Medical
DescriptionM/A-COM UF2810P Integrated Circuit, DualInlinePackageandSingleInlinePackageDryReedRelays
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