MINDSPEED UF28100V overview
MACOM UF28100V Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:COMMON SOURCE, 2 ELEMENTS,Number of Terminals:8...
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Manufactured byMINDSPEED
Product groupIntegrated Circuit
DescriptionMACOM UF28100V Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:COMMON SOURCE, 2 ELEMENTS,Number of Terminals:8,DS Breakdown Voltage-Min:65 V,Highest Frequency Band:ULTRA HIGH FREQUENCY BAND,Number of Elements:2,Drain Current-Max (Abs) (ID):12 A,Drain Current-Max (ID):12 A
DescriptionMindspeed, MACOM UF28100V Communications, RF Power Products, Broadcast and Industrial, Scientific and Medical
DescriptionM/A-COM UF28100V Integrated Circuit, DualInlinePackageandSingleInlinePackageDryReedRelays
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Integrated Circuit
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