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KLI-8811

Kodak · Linear CCD Image Sensors

Kodak KLI-8811

Kodak KLI-8811 overview

KLI-8811 is a linear CCD image sensor made by Kodak. Eastman Kodak Company KLI-8811 Image Sensor Kodak KLI-8811 Image Sensor | Pixels (HxV) = 8800 X 1, Pixel Size (H X Vµm) = 7 Kodak KLI-8811 Element Linear CCD Image SensorFeatures User Selectable High Resolution: 8800 or 7300 active pixels High Sensitivity Wide…

Manufactured byKodak
Part number or familyKLI-8811
Product typeLinear CCD Image Sensor

Product details

Manufactured byKodak
Product typeLinear CCD Image Sensor
DescriptionEastman Kodak Company KLI-8811 Image Sensor
DescriptionEastman Kodak Company KLI-8811 Image Sensor
DescriptionKodak KLI-8811 Image Sensor | Pixels (HxV) = 8800 X 1, Pixel Size (H X Vµm) = 7
DescriptionKodak KLI-8811 Element Linear CCD Image SensorFeatures User Selectable High Resolution: 8800 or 7300 active pixels High Sensitivity Wide Dynamic Range No Image Lag High Charge Transfer Efficiency Up to 1.4V peak-peak Output Two-Phase Register Clocking On-chip Dark Reference 30MHz per channel with Copper/Tungsten package configuration. (120Mhz data rate)The KLI-8811 is a linear imaging Charge-Coupled Device (CCD) designed for high resolution scanning applications. Each device contains a row of 8800 active photoelements, consisting of high performance pinned diodes for improved sensitivity, lower noise and the elimination of lag. Readout of the pixel data is accomplished through the use of four CCD shift registers, positioned on each side of the photodiode array and divided into left and right halves that read towards the center of the device. The photodiodes are 7µm x 7µm and are located on 7µm centers. The array is structured so as to provide 8 'blank' CCD cells followed by 2200 pixels of active image data for each output. 10 dark reference pixels follow the active pixels, then 4 test pixels, followed by 2 'blank' CCD cells for each output. The user has the option of reducing the resolution to 7300 active pixels by draining the remainder of the charge packets from the shift registers using the resolution select control gate. The devices are manufactured using NMOS, buried channel processing and utilize dual layer polysilicon and dual layer metal technologies. The die size is 63.5 mm X 1.2 mm and is housed in dual-in-line packages in either 0.600" wide, 40-pin cerdip package (see Figure 3), or, 0.400″ wide, cofired ceramic package with a coppertungsten heat sink (see Figure 4) configurations. The cover glass is Corning 7059 with multi-layer antireflective (MAR) coatings.

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