Product details
Manufactured byKEC
Product groupModules
DescriptionKEC KHB1D0N60G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (ID):400 mA,Drain-source On Resistance-Max:8 ?
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KEC
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Modules
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