IXYS MWI50-12E6K overview
IXYS Corporation MWI50-12E6K Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):51 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Con...
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Manufactured byIXYS
Product groupDiscrete Semiconductor Products
DescriptionIXYS Corporation MWI50-12E6K Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):51 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR, Number of Terminals:19, Number of Elements:6
DescriptionMOD IGBT SIXPACK RBSOA 1200V E1
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Discrete Semiconductor Products
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