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MWI25-12E7

IXYS ยท Discrete Semiconductor Products

IXYS MWI25-12E7

IXYS MWI25-12E7 overview

IXYS Corporation MWI25-12E7 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):52 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Conf...

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Part number or familyMWI25-12E7

Product details

Manufactured byIXYS
Product groupDiscrete Semiconductor Products
DescriptionIXYS Corporation MWI25-12E7 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):52 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:11, Number of Elements:6
DescriptionMOD IGBT SIXPACK RBSOA 1200V E2

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Product group Discrete Semiconductor Products Explore Discrete Semiconductor Products Explore Transistor Explore IGBTs
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