IXYS MWI225-12E9 overview
MWI225-12E9 by IXYS is listed under Discrete Semiconductor Products. IXYS Corporation MWI225-12E9 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):355 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND…
Product details
Manufactured byIXYS
Product typeDiscrete Semiconductor Product
DescriptionIXYS Corporation MWI225-12E9 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):355 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR... more, Number of Terminals:17, Number of Elements:6
DescriptionMOD IGBT SIXPACK E+
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Discrete Semiconductor Product
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