IXYS MUBW15-12T7 overview
IXYS Corporation MUBW15-12T7 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):30 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Con...
Product details
Manufactured byIXYS
Product typeDiscrete Semiconductor Product
DescriptionIXYS Corporation MUBW15-12T7 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):30 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:24, Number of Elements:7
DescriptionMODULE IGBT CBI E2
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Discrete Semiconductor Product
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