IXYS MIXA10WB1200TML overview
IXYS Corporation MIXA10WB1200TML Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):17 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO,...
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Manufactured byIXYS
Product typeDiscrete Semiconductor Product
DescriptionIXYS Corporation MIXA10WB1200TML Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):17 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:25, Number of Elements:7
DescriptionIGBT MODULE 1200V 12A HEX
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Discrete Semiconductor Product
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