IXYS MIO600-65E11 overview
MIO600-65E11 by IXYS is listed under Discrete Semiconductor Products. IXYS Corporation MIO600-65E11 Igbt, Collector-Emitter Voltage-Max:6.5 kV, Collector Current-Max (IC):600 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:9, Number of Elements:3 IGBT MODULE SGL 600A E11
Product details
Manufactured byIXYS
Product typeDiscrete Semiconductor Product
DescriptionIXYS Corporation MIO600-65E11 Igbt, Collector-Emitter Voltage-Max:6.5 kV, Collector Current-Max (IC):600 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:9, Number of Elements:3
DescriptionIGBT MODULE SGL 600A E11
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Discrete Semiconductor Product
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