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IXGN80N60A2D1

IXYS ยท Discrete Semiconductor Products

IXYS IXGN80N60A2D1

IXYS IXGN80N60A2D1 overview

IXYS Corporation IXGN80N60A2D1 Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):160 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, C...

Manufactured byIXYS
Part number or familyIXGN80N60A2D1

Product details

Manufactured byIXYS
Product groupDiscrete Semiconductor Products
DescriptionIXYS Corporation IXGN80N60A2D1 Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):160 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, Number of Elements:1
DescriptionIGBT 600V 160A FRD SOT-227B

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Product group Discrete Semiconductor Products Explore Discrete Semiconductor Products Explore Transistor Explore IGBTs
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