IXYS IXGN100N170 overview
IXYS Corporation IXGN100N170 Igbt, Collector-Emitter Voltage-Max:1.7 kV, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):160 A, Polarity/Channel Ty...
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Manufactured byIXYS
Product groupDiscrete Semiconductor Products
DescriptionIXYS Corporation IXGN100N170 Igbt, Collector-Emitter Voltage-Max:1.7 kV, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):160 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:4, Number of Elements:1
DescriptionIGBT 1700V 160A GENX3 SOT-227B
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Discrete Semiconductor Products
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