IXYS IXBN75N170 overview
IXBN75N170 by IXYS is listed under Discrete Semiconductor Products. IXYS Corporation IXBN75N170 Igbt, Collector-Emitter Voltage-Max:1.7 kV, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):145 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of…
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Manufactured byIXYS
Product typeDiscrete Semiconductor Product
DescriptionIXYS Corporation IXBN75N170 Igbt, Collector-Emitter Voltage-Max:1.7 kV, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):145 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, Number of Elements:1
DescriptionIGBT BIMOSFET 1700V 145A SOT227B
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Discrete Semiconductor Product
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