IXYS IXGH32N60AU1 overview
IXYS Corporation IXGH32N60AU1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):60 A, Polarity/Channel Typ...
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Manufactured byIXYS
Product groupDiscrete Semiconductor Products
DescriptionIXYS Corporation IXGH32N60AU1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):60 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionIGBT 600V 60A 200W TO247AD
DescriptionIXYS IXGH32N60AU1 IXYS IXGH32N60AU1 Semiconductors - IGBT W/DIODE 600V 60A TO-247AD
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Discrete Semiconductor Products
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