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DescriptionIXYS Corporation IXFH9N80Q Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:800 V, Number of Elements:1, Drain Current-Max (ID):9 A, Drain-source On Resistance-Max:1.1 Ω
DescriptionIXYS Corporation IXFH9N80Q Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (ID):9 A,Drain-source On Resistance-Max:1.1 ?
DescriptionIXYS IXFH9N80Q IXYS IXFH9N80Q Semiconductors - Mosfets w/fast Intrinsic Diode
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