IXYS IXFA3N80 overview
IXYS Corporation IXFA3N80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...
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Manufactured byIXYS
Product typePower
DescriptionIXYS Corporation IXFA3N80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:800 V, Number of Elements:1, Drain Current-Max (ID):3.6 A, Drain-source On Resistance-Max:3.6 Ω
DescriptionIXYS Corporation IXFA3N80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:800 V, Number of Elements:1, Drain Current-Max (ID):3.6 A, Drain-source On Resistance-Max:3.6 Ω
DescriptionIXYS IXFA3N80 Power, Passive & Discrete Products
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