IXYS IXLN35N120AU1 overview
IXYS Corporation IXLN35N120AU1 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):40 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, C...
Product details
Manufactured byIXYS
Product groupDiscrete Semiconductor Products
DescriptionIXYS Corporation IXLN35N120AU1 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):40 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, Number of Elements:1
DescriptionIGBT Modules
DescriptionIXYS IXLN35N120AU1 IXLN35N120AU1
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Discrete Semiconductor Products
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