IXYS IXFK64N60Q3 overview
IXFK64N60Q3 by IXYS is listed under Electronic Components. IXYS Corporation IXFK64N60Q3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs)…
Product details
Manufactured byIXYS
Product typeElectronic Component
DescriptionIXYS Corporation IXFK64N60Q3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):64 A, Drain Current-Max (ID):64 A, Drain-source On Resistance-Max:95 mΩ
DescriptionIXYS Corporation IXFK64N60Q3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):64 A,Drain Current-Max (ID):64 A,Drain-source On Resistance-Max:95 m?
DescriptionIXYS IXFK64N60Q3 Semiconductors, Electronic Components, MOSFETs, Active Components, FETs
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Electronic Component
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