IXYS IXTQ60N10T overview
IXYS Corporation IXTQ60N10T Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...
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Product groupTransistor
DescriptionIXYS Corporation IXTQ60N10T Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):60 A, Drain Current-Max (ID):60 A, Drain-source On Resistance-Max:18 mΩ
DescriptionIXYS IXTQ60N10T Specialized Hot IC, IXTQ60N10T IXYS
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