IXYS IXTH35N30 overview
IXYS Corporation IXTH35N30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...
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Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXTH35N30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:300 V, Number of Elements:1, Drain Current-Max (Abs) (ID):35 A, Drain Current-Max (ID):35 A, Drain-source On Resistance-Max:100 mΩ
DescriptionIXYS IXTH35N30 Specialized Hot IC, IXTH35N30 IXYS
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Transistor
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