IXYS IXSH35N135A overview
IXYS Corporation IXSH35N135A Igbt, Collector-Emitter Voltage-Max:1.4 kV, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):70 A, Polarity/Channel Typ...
Product details
Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXSH35N135A Igbt, Collector-Emitter Voltage-Max:1.4 kV, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):70 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
DescriptionIXYS IXSH35N135A Integrated Circuit, IXSH35N135A IXYS
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
IXYS
View IXYS profile
Available from
Sourcing support available
Start a sourcing request