IXYS IXSH10N60A overview
IXYS Corporation IXSH10N60A Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:...
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Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXSH10N60A Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
DescriptionIXYS IXSH10N60A Specialized Hot IC, IXSH10N60A IXYS
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