IXYS IXGT30N60C3D1 overview
IXYS Corporation IXGT30N60C3D1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):60 A, Polarity/Channel ...
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Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXGT30N60C3D1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):60 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
DescriptionIXYS IXGT30N60C3D1 Specialized Hot IC, IXGT30N60C3D1 IXYS
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