IXYS IXGH56N60B3 overview
IXYS Corporation IXGH56N60B3 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):130 A, Polarity/Channel Typ...
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Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXGH56N60B3 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):130 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
DescriptionIXYS IXGH56N60B3 Integrated Circuit, IXGH56N60B3 IXYS
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