IXYS IXGH50N60B4D1 overview
IXYS Corporation IXGH50N60B4D1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):100 A, Polarity/Channel...
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Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXGH50N60B4D1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):100 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionIXYS IXGH50N60B4D1 Specialized Hot IC, IXGH50N60B4D1 IXYS
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