IXYS IXGH50N60AS overview
IXYS Corporation IXGH50N60AS Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):75 A, Polarity/Channel Type...
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Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXGH50N60AS Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):75 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1
DescriptionIXYS IXGH50N60AS Integrated Circuit, IXGH50N60AS IXYS
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