IXYS IXGH30N120B3 overview
IXYS Corporation IXGH30N120B3 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):60 A, Polarity/Channel Ty...
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Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXGH30N120B3 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):60 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
DescriptionIXYS IXGH30N120B3 Specialized Hot IC, IXGH30N120B3 IXYS
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