IXYS IXGH12N100U1 overview
IXYS Corporation IXGH12N100U1 Igbt, Collector-Emitter Voltage-Max:1 kV, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):20 A, Polarity/Channel Ty...
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Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXGH12N100U1 Igbt, Collector-Emitter Voltage-Max:1 kV, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionIXYS IXGH12N100U1 Integrated Circuit, IXGH12N100U1 IXYS
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