IXYS IXGH12N100A overview
IXYS Corporation IXGH12N100A Igbt, Collector-Emitter Voltage-Max:1 kV, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):20 A, Polarity/Channel Typ...
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Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXGH12N100A Igbt, Collector-Emitter Voltage-Max:1 kV, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
DescriptionIXYS IXGH12N100A Specialized Hot IC, IXGH12N100A IXYS
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