IXYS IXFT66N20Q overview
IXYS Corporation IXFT66N20Q Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number ...
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Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXFT66N20Q Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):66 A, Drain-source On Resistance-Max:40 mΩ
DescriptionIXYS IXFT66N20Q Integrated Circuit, IXFT66N20Q IXYS
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Transistor
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