IXYS IXFT26N60 overview
IXYS Corporation IXFT26N60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...
Product details
Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXFT26N60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):26 A, Drain Current-Max (ID):26 A, Drain-source On Resistance-Max:250 mΩ
DescriptionIXYS IXFT26N60 Integrated Circuit, IXFT26N60 IXYS
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
IXYS
View IXYS profile
Product group
Transistor
Explore Transistor Explore Integrated Circuits (ICs) Explore Power Field-effect Transistors
Available from
Sourcing support available
Start a sourcing request