IXYS IXFH5N100P overview
IXYS Corporation IXFH5N100P Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...
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Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXFH5N100P Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:1 kV, Number of Elements:1, Drain Current-Max (Abs) (ID):5 A, Drain Current-Max (ID):5 A, Drain-source On Resistance-Max:2.8 Ω
DescriptionIXYS IXFH5N100P Integrated Circuit, IXFH5N100P IXYS
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Transistor
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