IXYS IXFH26N60 overview
IXYS Corporation IXFH26N60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...
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Manufactured byIXYS
Product groupTransistor
DescriptionIXYS Corporation IXFH26N60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):26 A, Drain Current-Max (ID):26 A, Drain-source On Resistance-Max:250 mΩ
DescriptionIXYS IXFH26N60 Integrated Circuit, IXFH26N60 IXYS
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Transistor
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