IXYS GWM220-004P3 overview
IXYS Corporation GWM220-004P3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-IN ...
Product details
Manufactured byIXYS
Product groupIntegrated Circuit
DescriptionIXYS Corporation GWM220-004P3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:17, DS Breakdown Voltage-Min:40 V, Number of Elements:6, Drain Current-Max (ID):220 A, Drain-source On Resistance-Max:3.5 mΩ
DescriptionIXYS GWM220-004P3 Integrated Circuit, Three Phase Full Bridge With Trench Mosfets In Dcb Isolated High Current Package
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Integrated Circuit
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