IXYS MWI35-12E7 overview
IXYS Corporation MWI35-12E7 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):52 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Conf...
Product details
Manufactured byIXYS
Product groupDiscrete Semiconductor Products
DescriptionIXYS Corporation MWI35-12E7 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):52 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:17, Number of Elements:6
DescriptionIGBT Modules
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
IXYS
View IXYS profile
Product group
Discrete Semiconductor Products
Explore Discrete Semiconductor Products Explore Transistor Explore IGBT Module
Available from
Sourcing support available
Start a sourcing request