IXYS IXLN35N120A overview
IXYS Corporation IXLN35N120A Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:9 V, Collector Current-Max (IC):40 A, Polarity/Channel Typ...
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Manufactured byIXYS
Product groupDiscrete Semiconductor Products
DescriptionIXYS Corporation IXLN35N120A Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:9 V, Collector Current-Max (IC):40 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:4, Number of Elements:1
DescriptionIGBT Modules
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Discrete Semiconductor Products
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