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DescriptionIXYS Corporation IXTH50P085 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:85 V, Number of Elements:1, Drain Current-Max (ID):50 A, Drain-source On Resistance-Max:55 mΩ
DescriptionIXYS Corporation IXTH50P085 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:85 V, Number of Elements:1, Drain Current-Max (ID):50 A, Drain-source On Resistance-Max:55 mΩ
DescriptionIXYS IXTH50P085 Discrete Semiconductor Products
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