Product details
Manufactured byIXYS
Product groupModules
DescriptionIXYS Corporation IXTA8N50P Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:800 mΩ
DescriptionIXYS Corporation IXTA8N50P Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (ID):8 A,Drain-source On Resistance-Max:800 m?
DescriptionIXYS IXTA8N50P Discrete Semiconductor Products
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
IXYS
View IXYS profile
Available from
Sourcing support available
Start a sourcing request