IXYS IXST30N60B2D1 overview
IXYS Corporation IXST30N60B2D1 Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):48 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, C...
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Manufactured byIXYS
Product groupDiscrete Semiconductor Products
DescriptionIXYS Corporation IXST30N60B2D1 Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):48 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
DescriptionIGBT 600V 48A 250W TO268
DescriptionIXYS IXST30N60B2D1 Discrete Semiconductor Products
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Discrete Semiconductor Products
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