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IXSP10N60B2D1

IXYS ยท Discrete Semiconductor Products

IXYS IXSP10N60B2D1

IXYS IXSP10N60B2D1 overview

IXYS Corporation IXSP10N60B2D1 Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Co...

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Part number or familyIXSP10N60B2D1

Product details

Manufactured byIXYS
Product groupDiscrete Semiconductor Products
DescriptionIXYS Corporation IXSP10N60B2D1 Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionIGBT 600V 20A 100W TO220AB
DescriptionIXYS IXSP10N60B2D1 IGBT HS W/DIODE 600V 20A TO220AB

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Product group Discrete Semiconductor Products Explore Discrete Semiconductor Products Explore Transistor Explore IGBTs
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