IXYS IXSP2N100 overview
IXSP2N100 is a transistor made by IXYS. IXYS Corporation IXSP2N100 Igbt, Collector-Emitter Voltage-Max:1 kV, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
Product details
Manufactured byIXYS
Product typeTransistor
DescriptionIXYS Corporation IXSP2N100 Igbt, Collector-Emitter Voltage-Max:1 kV, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
DescriptionIXYS Corporation IXSP2N100 IGBT, Collector-Emitter Voltage-Max:1 kV, Gate-Emitter Thr Voltage-Max:8 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
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