IXYS FII30-12E overview
FII30-12E is a transistor made by IXYS. IXYS Corporation FII30-12E Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):33 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:5, Number of Elements:2
Product details
Manufactured byIXYS
Product typeTransistor
DescriptionIXYS Corporation FII30-12E Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):33 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:5, Number of Elements:2
DescriptionIXYS Corporation FII30-12E IGBT, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):33 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:5, Number of Elements:2
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