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RFL1N10L

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INTERSIL RFL1N10L

INTERSIL RFL1N10L overview

Intersil Corporation RFL1N10L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number...

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Part number or familyRFL1N10L
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Product groupModules
DescriptionIntersil Corporation RFL1N10L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1 A, Drain Current-Max (ID):1 A, Drain-source On Resistance-Max:1.2 Ω
DescriptionIntersil Corporation RFL1N10L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):1 A,Drain Current-Max (ID):1 A,Drain-source On Resistance-Max:1.2 ?
DescriptionINTERSIL RFL1N10L Integrated Circuit, Progammable Array Logic Series 24 (PAL Series 24)

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