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Manufactured byINTERSIL
Product groupModules
DescriptionIntersil Corporation FSR1110D1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:14, DS Breakdown Voltage-Min:100 V, Number of Elements:4, Drain Current-Max (Abs) (ID):1 A, Drain Current-Max (ID):1 A, Drain-source On Resistance-Max:680 mΩ
DescriptionIntersil Corporation FSR1110D1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:14,DS Breakdown Voltage-Min:100 V,Number of Elements:4,Drain Current-Max (Abs) (ID):1 A,Drain Current-Max (ID):1 A,Drain-source On Resistance-Max:680 m?
DescriptionINTERSIL FSR1110D1 Integrated Circuit, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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