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Manufactured byINTERSIL
Product groupModules
DescriptionIntersil Corporation FSPYE234R4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:250 V, Number of Elements:1, Drain Current-Max (Abs) (ID):9 A, Drain Current-Max (ID):9 A, Drain-source On Resistance-Max:215 mΩ
DescriptionIntersil Corporation FSPYE234R4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:250 V,Number of Elements:1,Drain Current-Max (Abs) (ID):9 A,Drain Current-Max (ID):9 A,Drain-source On Resistance-Max:215 m?
DescriptionINTERSIL FSPYE234R4 Integrated Circuit, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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